二氧化矽拋光液應用參數

二氧化矽拋光液介紹:

BW二氧化矽拋光液是以高純矽粉為原料，在催化劑作用下，通過熱水解的方法生產。產品具有細微性可控、純度高、拋光速率高的優勢，廣泛用於納米級的化學機械拋光。

二氧化矽拋光液典型型號及技術參數

http://tw.tool-tool.com/news/201111/application-parameters-of-silica-slurry/

鹼性 pH: 9.8±0.5	SOQ-2	SOQ-4	SOQ-6	SOQ-8	SOQ-10	SOQ-12
酸性 pH: 2.8±0.5	ASOQ-2	ASOQ-4	ASOQ-6	ASOQ-8	ASOQ-10	ASOQ-12
細微性(nm)	10~30	30~50	50~70	70~90	90~110	110~130
外觀	半透明或乳白色液體
密度 (g/ml)	1. 15±0.05
濃度 (SiO2 (wt)%)	15-30%

SEM 照片

TEM 照片

粒度分佈圖

典型應用-矽晶片拋光

拋光參數
Polishing Pressure	3-9 psi
Platen Velocity	50-120 rpm
Head Velocity	50-120 rpm
Process Temperature	30-60°C
Removal Rate	200 nm-5000 nm/min

典型應用-矽晶片拋光

The RR increases with pH

• The removal rate : 1.42um/min at 3psi condition
• Pretty similar results on the Si surface with < 1nm Rms
• the metal ions (Cu2+ <50 ppb)

典型應用-砷化鎵晶片拋光

TXRF data of Grish Acidic CMP Slurry on GaAs Wafer
	X	Y	Si- Ka	P- Ka	S- Ka	Cl- Ka	K- Ka	Ca- Ka	Ti- Ka	Cr- Ka	Mn- Ka	Fe- Ka	Ni- Ka	Cu- Ka
	mm	mm	*E10atoms/cm2
Before Cleaned	0	0	29314.18	264.55	1705.06	511.83	0	2.2	0	0	0.08	0	6.15	203.03
	30	-30	26327.67	290.81	1862.88	477.8	0	2.66	0	0	0	0.24	6.64	202.88
	-30	30	24038.63	158.1	1851.26	473.69	0.97	3.87	0	0.01	0.06	0.02	0	206.76
After Cleaned	0	0	85.64	87.92	631.9	248.35	0.2	0.52	0	0	0	1.28	1.31	15
	30	-30	102.44	142.21	660.72	233.78	0	0.54	0	0	0	0.74	0	16.82
	-30	30	76.53	83.47	674.92	254.97	0	0.61	0	0	0	0.8	0	20.14

典型應用-晶片氧化層拋光

Wafers	200mm, 10k Thermo-OX
Film Measurement	Nanotech, 3mm edge exclusion
Conditioner Disc	3M
Conditioning	ex-situ
Pad break-in	9 mins
Pad break-in	IC1010
Polish Time, s	60
Membrane Pressure (psi)	1; 2; 3; 4
Head speed, rpm	113
Platen speed	109
Slurry	MOP60
Slurry Flow Rate, ml	300
Slurry Property	Colloidal silica, 10% solid

Tunable selectivity	1 psi	2 psi	3 psi	4 psi
OX RR	2406	2808	3260	3852
SiN RR	59	113	185	257
Selectivity，OX/SiN	40.9	24.8	17.6	15.0

• Colloidal particle stable for lower defectives
• The selectivity of Ox/SiN is tunable with additive

典型應用-晶片銅層拋光

High removal rate

pH	particle	particle size	selectivity, 2psi
			Cu/Ta	Cu/TaN
3.0-6.0	Colloidal silica	~30nm	>500	>340

RemovalÅ	Step height , Å
	100/100 um	50/50 um	10/10 um
0	5000	5000	5000
1458	3287	3315	3294
3588	1402	1421	1400
5114	145	107	48

Good planarization efficiency

典型應用-藍寶石晶片拋光

拋光機	瀋陽科晶UNIPOL-1502
拋光轉速	80RPM
拋光壓力	7.5公斤/2英寸
拋光液流量	80ml/min
拋光液配比	（原液：純水）=1：3
拋光方式	300ml拋光液迴圈拋光3H

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